Young's modulus and corresponding orientation in ?-Ga₂O₃ thin films resolved by nanomechanical resonators

We report on the non-destructive measurement of Young's modulus thin-film single crystal beta gallium oxide (beta-Ga2O3) out its nanoscale mechanical structures by measuring their fundamental mode resonance frequencies. From measurements, we extract in (100) plane, EY,(100) = 261.4+/-20.6 GPa, for beta-Ga2O3 nanoflakes synthesized low-pressure chemical vapor deposition (LPCVD), and [010] direction, EY,[010] 245.8+/-9.2 nanobelts mechanically cleaved from bulk grown edge-defined film-fed growth (EFG) method. The moduli extracted directly nanomechanical resonant device platforms are comparable to theoretical values first-principle calculations experimentally crystal. This study yields important quantitative properties crystals, helps pave way further engineering micro/nanoelectromechanical systems (M/NEMS) transducers.